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APTM120U10SCAVG
Single switch Series & SiC parallel diodes MOSFET Power Module
D
VDSS = 1200V RDSon = 100m typ @ Tj = 25C ID = 116A @ Tc = 25C
Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control Features * Power MOS 7(R) MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged
DK
G SK S
G, SK and DK terminals are for control signals only (not for power)
*
SiC Parallel Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF Kelvin source for easy drive Kelvin drain for voltage monitoring Very low stray inductance - Symmetrical design - M5 power connectors - M3 power connectors High level of integration AlN substrate for improved MOSFET thermal performance
* * *
DK S D
* *
SK
G
All ratings @ Tj = 25C unless otherwise specified
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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1-8
APTM120U10SCAVG - Rev 1
September, 2009
Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Low profile * RoHS Compliant
APTM120U10SCAVG
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C Max ratings 1200 116 86 464 30 120 3290 24 50 3200 Unit V A V m W A mJ
Tc = 25C
Electrical Characteristics
Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions
VGS = 0V,VDS = 1200V VGS = 0V,VDS = 1000V Tj = 25C Tj = 125C
Min
Typ
VGS = 10V, ID = 58A VGS = VDS, ID = 20mA VGS = 30 V, VDS = 0V
100 3
Max 1 3 120 5 400
Unit mA m V nA
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 600V ID = 116A Inductive switching @ 125C VGS = 15V VBus = 800V ID = 116A RG =1.2 Inductive switching @ 25C VGS = 15V, VBus = 800V ID = 116A, RG = 1.2 Inductive switching @ 125C VGS = 15V, VBus = 800V ID = 116A, RG = 1.2 Min Typ 28.9 4.4 0.8 1100 128 716 20 17 245 62 3 4.6 5.5 5.6 mJ
September, 2009 2-8 APTM120U10SCAVG - Rev 1
Max
Unit nF
nC
ns
mJ
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APTM120U10SCAVG
Series diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage IF = 120A IF = 240A IF = 120A IF = 120A VR = 133V Test Conditions VR=200V Tj = 25C Tj = 125C
Tc = 80C
Min 200
Typ
Max 350 600
Unit V A A
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
120 1.1 1.4 0.9 31 60 120 500
1.15 V
trr Qrr
Reverse Recovery Time Reverse Recovery Charge
ns nC
di/dt = 400A/s
SiC Parallel diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF QC C Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Total Capacitive Charge Total Capacitance Test Conditions Tj = 25C Tj = 175C Tc = 100C Tj = 25C IF = 90A Tj = 175C IF = 90A, VR = 300V di/dt =1800A/s VR=1200V f = 1MHz, VR = 200V f = 1MHz, VR = 400V Min 1200 Typ 288 504 90 1.6 2.3 360 864 621 Max 1800 9000 1.8 3 Unit V A A V nC pF
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Transistor Series diode SiC Parallel diode 4000 -40 -40 -40 3 2 1 Min Typ Max 0.038 0.46 0.22 150 125 100 5 3.5 1.5 280 Unit C/W V C
September, 2009 3-8 APTM120U10SCAVG - Rev 1
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range Storage Temperature Range Operating Case Temperature To heatsink Mounting torque Package Weight For terminals M6 M5 M3
N.m g
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APTM120U10SCAVG
SP6 Package outline (dimensions in mm)
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
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4-8
APTM120U10SCAVG - Rev 1
September, 2009
APTM120U10SCAVG
Typical MOSFET Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.04 Thermal Impedance (C/W) 0.035 0.03 0.025 0.02 0.015 0.01 0.005 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10 0.5 0.3 0.9 0.7
0 0.00001
rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 280 ID, Drain Current (A) ID, Drain Current (A) 240 200 160 120 80 40 0 0 5 10 15 20 25 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current ID, DC Drain Current (A)
Normalized to VGS=10V @ 58A 4.5V 6V 5.5V VGS=15, 10V 7V
Transfert Characteristics 320 280 240 200 160 120 80 40 0 0 1 2 3 4 5 6 7 VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 120 100 80 60 40 20
September, 2009 5-8 APTM120U10SCAVG - Rev 1
TJ=125C TJ=25C
VDS > ID(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle
5V
30
RDS(on) Drain to Source ON Resistance
1.4 1.3 1.2 1.1 1 0.9 0.8 0
VGS=10V VGS=20V
0 40 80 120 160 200 240 25 50 75 100 125 150 ID, Drain Current (A) TC, Case Temperature (C)
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APTM120U10SCAVG
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area 1000 ID, Drain Current (A)
limited by RDSon 100s VGS=10V ID=58A
TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage VGS, Gate to Source Voltage (V) 100000 Ciss C, Capacitance (pF) 10000 14 12 10 8 6 4 2 0 0
100
1ms 10ms
10
Single pulse TJ=150C TC=25C 1 1200 10 100 1000 VDS, Drain to Source Voltage (V)
1
Gate Charge vs Gate to Source Voltage ID=116A TJ=25C
VDS=600V VDS=960V VDS=240V
Coss
1000
Crss
100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V)
Gate Charge (nC)
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6-8
APTM120U10SCAVG - Rev 1
September, 2009
300
600
900
1200
1500
APTM120U10SCAVG
Delay Times vs Current 300 td(on) and td(off) (ns) 250 200 150 100 50 0 30 60 90 120 150 180 ID, Drain Current (A) Switching Energy vs Current 12 Switching Energy (mJ) 9 6 3 Eoff 0 30 60 90 120 150 180 ID, Drain Current (A) Operating Frequency vs Drain Current 150 Frequency (kHz) 125 100 75 50 25 0 50 70 90 ID, Drain Current (A) 110
VDS=800V D=50% RG=1.2 TJ=125C TC=75C ZCS ZVS VDS=800V RG=1.2 TJ=125C L=100H
Rise and Fall times vs Current 100 td(off) 80
VDS=800V RG=1.2 TJ=125C L=100H
tf
tr and tf (ns)
60 40 20 0 30 60 90 120 150 ID, Drain Current (A) 180 tr
td(on)
Switching Energy vs Gate Resistance 24
VDS=800V ID=116A TJ=125C L=100H
Eon
Switching Energy (mJ)
VDS=800V RG=1.2 TJ=125C L=100H
20 16 12
Eoff
Eon 8 4 0 2 4 6 8 Gate Resistance (Ohms) Source to Drain Diode Forward Voltage
IDR, Reverse Drain Current (A)
175
1000
100
TJ=150C TJ=25C
10
Hard switching
1 VSD, Source to Drain Voltage (V)
September, 2009 7-8 APTM120U10SCAVG - Rev 1
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
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APTM120U10SCAVG
SiC Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.24 Thermal Impedance (C/W) 0.2 0.16 0.12 0.08 0.04 0.9 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse
0 0.00001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds) Forward Characteristics Reverse Characteristics 900 IR Reverse Current (A) 750 600 450 300 150 0 400
TJ=75C TJ=125C TJ=175C TJ=25C
IF Forward Current (A)
160 120 80 40 0 0 0.5 1
TJ=25C
TJ=75C
TJ=125C TJ=175C
1.5
2
2.5
3
3.5
600
800
1000 1200 1400 1600
VF Forward Voltage (V) Capacitance vs.Reverse Voltage
VR Reverse Voltage (V)
6300 C, Capacitance (pF) 5400 4500 3600 2700 1800 900 0 1 10 100 VR Reverse Voltage 1000
September, 2009 8-8 APTM120U10SCAVG - Rev 1
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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